FQH90N15 mosfet equivalent, n-channel power mosfet.
* 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V
* Low gate charge (typical 220 nC)
* Low Crss (typical 200 pF)
* Fast switching
* 100% avalanche tested
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such as audio amplifire, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power suppl.
October 2006
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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provi.
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