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Fairchild Semiconductor Electronic Components Datasheet

FQH90N15 Datasheet

N-Channel Power MOSFET

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FQH90N15 / FQA90N15
N-Channel Power MOSFET
Features
• 90A, 150V, RDS(on) = 0.018Ω @VGS = 10 V
• Low gate charge (typical 220 nC)
• Low Crss (typical 200 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
October 2006
QFET ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifire, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
GD S
TO-247
FQH Series
G DS
TO-3P
FQA Series
{D
z

G{
z
z
{S
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQH90N15/FQA90N15
150
90
63.5
360
±25
1400
90
37.5
6.0
375
2.5
-55 to +175
300
Min.
--
0.24
--
Max.
0.4
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FQH90N15 / FQA90N15 Rev. C
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FQH90N15 Datasheet

N-Channel Power MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FQH90N15
FQA90N15
FQA90N15
Device
FQH90N15
FQA90N15
FQA90N15_F109
Package
TO-247
TO-3P
TO-3PN
Reel Size
--
--
--
Tape Width
--
--
--
Quantity
30
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250μA
ID = 250μA, Referenced to 25°C
VDS = 150V, VGS = 0V
VDS = 120V, TC = 150°C
VGS = 25V, VDS = 0V
VGS = -25V, VDS = 0V
150
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250μA
VGS = 10V, ID = 45A
2.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 45A
(Note 4)
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 75V, ID = 90A
RG = 25Ω
VDS = 120V, ID = 90A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 90A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 90A
dIF/dt =100A/μs
(Note 4)
--
--
--
--
--
Typ.
--
0.15
--
--
--
--
--
0.014
68
6700
1400
200
105
760
470
410
220
43
110
--
--
--
175
0.97
Max Units
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
4.0
0.018
--
V
Ω
S
8700
1800
260
pF
pF
pF
220
1500
950
830
285
--
--
ns
ns
ns
ns
nC
nC
nC
90 A
360 A
1.5 V
-- ns
-- μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.29mH, IAS = 90A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C
3. ISD 90A, di/dt 300A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FQH90N15 / FQA90N15 Rev. C
2
www.fairchildsemi.com


Part Number FQH90N15
Description N-Channel Power MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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