FQI9N50C Key Features
- 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 24 pF) Fast switching 100% av
- Part: FQI9N50C
- Manufacturer: Fairchild (official site)
- Size: 635.46 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQI9N08 | 80V N-Channel MOSFET |
| FQI9N08L | 80V LOGIC N-Channel MOSFET |
| FQI9N15 | 150V N-Channel MOSFET |
| FQI9N25 | 250V N-Channel MOSFET |
| FQI9N30 | N-Channel MOSFET |
FQI9N50C Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,...