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FQP10N60C - 600V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 9.5 A, 600 V, RDS(on) = 730 mΩ (Max. ) @ VGS = 10 V, ID = 4.75 A.
  • Low Gate Charge (Typ. 44 nC).
  • Low Crss (Typ. 18 pF).
  • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Dr.

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Datasheet Details

Part number FQP10N60C
Manufacturer Fairchild Semiconductor
File Size 1.30 MB
Description 600V N-Channel MOSFET
Datasheet download datasheet FQP10N60C Datasheet
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Full PDF Text Transcription

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FQP10N60C / FQPF10N60C — N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ.
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