FQP10N60C Datasheet - Fairchild Semiconductor

600V N-Channel MOSFET

FQP10N60C Features

* 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A

* Low Gate Charge (Typ. 44 nC)

* Low Crss (Typ. 18 pF)

* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID

FQP10N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse.

FQP10N60C Datasheet (1.30 MB)

FQP10N60C Datasheet Preview — Preview of FQP10N60C PDF

Datasheet Details

Part number:

FQP10N60C

Manufacturer:

Fairchild Semiconductor

File Size:

1.30 MB

Description:

600v n-channel mosfet.
FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Descriptio.

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FQP10N60C 600V N-Channel MOSFET Fairchild Semiconductor

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FQP10N60C Features

FQP10N60C General Description

Datasheet Details

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Description:

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