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FQP10N60C - 600V N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQP10N60C
Manufacturer: Fairchild Semiconductor
File Size: 1.30 MB
Datasheet: FQP10N60C_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

FQP10N60C Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology..

Features

9.5 A, 600 V, RDS(on) = 730 mΩ (Max. ) @ VGS = 10 V, ID = 4.75 A.
Low Gate Charge (Typ. 44 nC).
Low Crss (Typ. 18 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Dr.

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FQP10N60C Stock/Price