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Fairchild Semiconductor Electronic Components Datasheet

FQP10N60C Datasheet

600V N-Channel MOSFET

No Preview Available !

November 2013
FQP10N60C / FQPF10N60C
N-Channel QFET® MOSFET
600 V, 9.5 A, 730 mΩ
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology. This advanced technology has
been especially tailored to mini-mize on-state resistance,
provide superior switching perfor-mance, and withstand high
energy pulse in the avalanche and commutation mode.
These devices are well suited for high effi-ciency switched
mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge topology.
Features
9.5 A, 600 V, RDS(on) = 730 m(Max.) @ VGS = 10 V,
ID = 4.75 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 18 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering,
1/8 from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink, Typ.
Thermal Resistance, Junction-to-Ambient, Max.
FQP10N60C FQPF10N60C
600
9.5 9.5 *
5.7 5.7 *
38 38 *
± 30
700
9.5
15.6
4.5
156 50
1.25 0.4
-55 to +150
300
FQP10N60C
0.8
0.5
62.5
FQPF10N60C
2.5
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FQP10N60C Datasheet

600V N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Part Number
FQP10N60C
FQPF10N60C
FQPF10N60CT
FQPF10N60C_F105
Top Mark
FQP10N60C
FQPF10N60C
FQPF10N60CT
FQPF10N60C
Package
TO-220
TO-220F
TO-220F
TO-220F
Packing Method
Tube
Tube
Tube
Tube
Reel Size
N/A
N/A
N/A
N/A
Tape Width
N/A
N/A
N/A
N/A
Quantity
50 units
50 units
50 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS
BVDSS
/ ∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.75 A
VDS = 40 V, ID = 4.75 A
2.0
--
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 9.5A,
RG = 25
VDS = 480 V, ID = 9.5A,
VGS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 9.5 A,
dIF / dt = 100 A/µs
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 14.2 mH, IAS = 9.5 A, VDD = 50 V, RG = 25 , starting TJ = 25°C.
3. ISD 9.5 A, di/dt 200 A/µs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
--
--
--
--
--
-- --
0.7 --
-- 1
-- 10
-- 100
-- -100
-- 4.0
0.6 0.73
8.0 --
1570
166
18
2040
215
24
23
69
144
77
44
6.7
18.5
55
150
300
165
57
--
--
-- 9.5
-- 38
-- 1.4
420 --
4.2 --
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
©2003 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev C1
2
www.fairchildsemi.com


Part Number FQP10N60C
Description 600V N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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