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FQP18N50V2 - 500V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current -.

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Datasheet Details

Part number FQP18N50V2
Manufacturer Fairchild Semiconductor
File Size 839.01 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet FQP18N50V2 Datasheet
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FQP18N50V2/FQPF18N50V2 QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. TM Features • • • • • • 18A, 500V, RDS(on) = 0.
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