FQP18N50V2 Datasheet | Fairchild Semiconductor

FQP18N50V2/FQPF18N50V2 QFET FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. TM Features - - - - - - 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! - ◀ ▲ - - G! G DS TO-220 FQP Series GD S TO-220F FQPF...