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* 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche teste.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQP18N20V2

FQP10N20

FQP10N20C

FQP10N20L

FQP10N50CF

FQP10N60

FQP10N60C

FQP10N60CF

FQP10N65

FQP11N40

FQP11N40C

FQP11N50CF

FQP11P06