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Fairchild Semiconductor Electronic Components Datasheet

FQP2P40 Datasheet

400V P-Channel MOSFET

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FQP2P40
400V P-Channel MOSFET
December 2000
QFETTM
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for electronic lamp ballasts based on the
complementary half bridge topology.
Features
• -2.0A, -400V, RDS(on) = 6.5@VGS = -10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
GD S
TO-220
FQP Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G!
S
!
▶▲
!
D
FQP2P40
-400
-2.0
-1.27
-8.0
± 30
120
-2.0
6.3
-4.5
63
0.51
-55 to +150
300
Typ Max
-- 1.98
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2000 Fairchild Semiconductor International
Rev. A2, December 2000


Fairchild Semiconductor Electronic Components Datasheet

FQP2P40 Datasheet

400V P-Channel MOSFET

No Preview Available !

Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -400 V, VGS = 0 V
VDS = -320 V, TC = 125°C
VGS = -30 V, VDS = 0 V
VGS = 30 V, VDS = 0 V
-400
--
--
--
--
--
--
-
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA
-3.0 --
VGS = -10 V, ID = -1.0 A
-- 5.0
VDS = -50 V, ID = -1.0 A (Note 4) -- 1.42
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 270
-- 45
-- 6.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -200 V, ID = -2.0 A,
RG = 25
(Note 4, 5)
VDS = -320 V, ID = -2.0 A,
VGS = -10 V
(Note 4, 5)
--
--
--
--
--
--
--
9
33
22
25
10
2.1
5.5
--
--
-1
-10
-100
100
-5.0
6.5
--
350
60
8.5
30
75
55
60
13
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- -2.0
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- -8.0
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.0 A
-- -- -5.0
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = -2.0 A,
-- 250
dIF / dt = 100 A/µs
(Note 4) -- 0.85
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 52.5mH, IAS = -2.0A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD -2.0A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A2, December 2000


Part Number FQP2P40
Description 400V P-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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