FQP2P40 Key Features
- 2.0A, -400V, RDS(on) = 6.5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.5 pF) Fast switching 100%
- TO-220
- Part: FQP2P40
- Manufacturer: Fairchild (official site)
- Size: 576.03 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQP2P25 | 250V P-Channel MOSFET |
| FQP20N06 | 60V N-Channel MOSFET |
| FQP20N06L | 60V N-Channel MOSFET |
| FQP22N30 | 300V N-Channel MOSFET |
| FQP22P10 | 100V P-Channel MOSFET |
FQP2P40 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for electronic lamp ballasts based on the plementary half...