FQP6N40CF Key Features
- 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V
- Low gate charge ( typical 16nC)
- Low Crss ( typical 15pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Fast recovery body diode (typical 70ns)
- Part: FQP6N40CF
- Manufacturer: Fairchild (official site)
- Size: 1.07 MB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQP6N40C | 400V N-Channel MOSFET |
| FQP6N45 | 450V N-Channel MOSFET |
| FQP6N15 | 150V N-Channel MOSFET |
| FQP6N25 | 250V n-Channel MOSFET |
| FQP6N50 | 500V n-Channel MOSFET |
FQP6N40CF Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,...