FQP7N65C Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. ® Features - - - - - - 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 n C) Low Crss ( typical 12 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - ◀ ▲ - - G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP7N65C 650 7 4.2 28 FQPF7N65C 7- 4.2 - 28 - ± 30 212 7 1.6 4.5 Units V A A A V m J A m J V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 160 1.28 -55 to +150 300 52 0.42 - Drain current limited by maximum junction temperature. Thermal Characteristics...