FQP7N65C

The FQP7N65C is 650V N-Channel MOSFET designed by Fairchild Semiconductor.

Product Overview

Fairchild Semiconductor

Part number	FQP7N65C
Manufacturer	Fairchild Semiconductor
File Size	948.87 KB
Description	650V N-Channel MOSFET
Datasheet	FQP7N65C_FairchildSemiconductor.pdf
Additional preview pages of the FQP7N65C datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
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G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Co.

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Published: Nov 7, 2011 |