FQP9P25 mosfet equivalent, 250v p-channel mosfet.
* -9.4 A, -250 V, RDS(on) = 0.62 Ω (Max.)@VGS = -10 V, ID = -4.7 A
* Low gate charge ( typ. 29 nC)
* Low Crss ( typ. 27 pF)
* 100% avalanche tested
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Features
* -9.4 A, -250 V, RDS(on) = 0.62 Ω (Max.)@VGS = -10 V, ID = -4.7 A
* Low gate charge ( typ. 29 nC)
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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