FQPF10N50CF mosfet equivalent, n-channel mosfet.
* 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V
* Low gate charge (typical 43 nC)
* Low Crss (typical 16pF)
* Fast switching
* 100% avalanche tested
* I.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 0.99MB)