FQPF10N50CF Key Features
- 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V
- Low gate charge (typical 43 nC)
- Low Crss (typical 16pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Fast recovery body diode
- Part: FQPF10N50CF
- Manufacturer: Fairchild (official site)
- Size: 0.99 MB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQPF10N20 | 200V N-Channel MOSFET |
| FQPF10N20C | 200V N-Channel MOSFET |
| FQPF10N60C | 600V N-Channel MOSFET |
| FQPF10N60CF | N-Channel MOSFET |
| FQPF11N40 | 400V N-Channel MOSFET |
FQPF10N50CF Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and...