FQPF10N60CF Key Features
- 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V
- Low gate charge ( typical 44 nC)
- Low Crss ( typical 18 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: FQPF10N60CF
- Manufacturer: Fairchild (official site)
- Size: 960.29 KB
Other FQPF10N60CF Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
| Oucan Semi Oucan Semi |
FQPF10N60 | N-Channel MOSFET |
FQPF10N60CF Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,...