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FQPF13N50CF - N-Channel MOSFET

Download the FQPF13N50CF datasheet PDF. This datasheet also covers the FQP13N50CF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V.
  • Low gate charge (typical 43 nC).
  • Low Crss (typical 20pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Fast recovery body diode (typical 100ns) TM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP13N50CF_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (onsemi)

Part Number Description
FQPF13N50C N-Channel MOSFET
FQPF13N50 500V N-Channel MOSFET
FQPF13N06 60V N-Channel MOSFET
FQPF13N06L 60V LOGIC N-Channel MOSFET
FQPF13N10 100V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET May 2006 FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features • 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 20pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 100ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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