* 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V
* Low gate charge (typical 43 nC)
* Low Crss (typical 20pF)
* Fast switching
* 100% avalanche tested
* Im.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQPF13N50C

FQPF13N50

FQPF13N06

FQPF13N06L

FQPF13N10

FQPF13N10L

FQPF10N20

FQPF10N20C

FQPF10N50CF

FQPF10N60

FQPF10N60C

FQPF10N60CF

FQPF10N65