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FQPF6N40CF - N-Channel MOSFET

Download the FQPF6N40CF datasheet PDF (FQP6N40CF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V.
  • Low gate charge ( typical 16nC).
  • Low Crss ( typical 15pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Fast recovery body diode (typical 70ns) TM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP6N40CF_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET February 2006 FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 70ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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