FQPF6N80CT, FQPF6N80C - 800V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF6N80CT, FQPF6N80C
Manufacturer	Fairchild Semiconductor
File Size	0.97 MB
Description	800V N-Channel MOSFET
Datasheet	FQPF6N80C-FairchildSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: FQPF6N80CT, FQPF6N80C. Please refer to the document for exact specifications by model.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

5.5 A, 800 V, RDS(on) = 2.5 Ω (Max. ) @ VGS = 10 V, ID = 2.75 A.
Low Gate Charge (Typ. 21 nC).
Low Crss (Typ. 8 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current.

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Published: Sep 2, 2016 |