FQPF6N80CT datasheet, mosfet equivalent, Fairchild Semiconductor

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FQPF6N80CT Features and benefits

* 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A
* Low Gate Charge (Typ. 21 nC)
* Low Crss (Typ. 8 pF)
* 100% Avalanche Tested D GDS TO.

FQPF6N80CT Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

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