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Fairchild Semiconductor Electronic Components Datasheet

FQPF7N65C Datasheet

650V N-Channel MOSFET

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FQPF7N65C
N-Channel QFET® MOSFET
650 V, 7 A, 1.4
August 2013
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
7 A, 650 V, RDS(on).= 1.4 (Max.) @ VGS = 10 V, ID = 3.5 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
GD S
TO-220F
D
G
S
TO-220F
Y-formed
D
!
G!
◀▲
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQPF7N65C / FQPF7N65CYDTU
650
7*
4.2 *
28 *
± 30
212
7
1.6
4.5
52
0.42
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF7N65C / FQPF7N65CYDTU
2.4
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FQPF7N65C Rev. C1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FQPF7N65C Datasheet

650V N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Device Marking
FQPF7N65C
FQPF7N65C
Device
FQPF7N65C
FQPF7N65CYDTU
Package
TO-220F
TO-220F (Y-formed)
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
650
--
--
--
--
--
--
0.8
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.5 A
VDS = 40 V, ID = 3.5 A
2.0 --
-- 1.2
-- 8
4.0
1.4
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 955 1245 pF
-- 100 130
pF
-- 12 16 pF
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 325 V, ID = 7A,
RG = 25
VDS = 520 V, ID = 7A,
VGS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
20 50
50 110
90 190
55 120
28 36
4.5 --
12 --
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 7A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 7A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
-- --
7
-- -- 28
-- -- 1.4
-- 400
--
-- 3.3
--
A
A
V
ns
µC
©2004 Fairchild Semiconductor Corporation
FQPF7N65C Rev. C1
www.fairchildsemi.com


Part Number FQPF7N65C
Description 650V N-Channel MOSFET
Maker Fairchild Semiconductor
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