Datasheet4U Logo Datasheet4U.com

FQPF7N65C - 650V N-Channel MOSFET

Key Features

  • This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  • 7 A, 650 V, RDS(on). = 1.4 Ω (Max. ) @ VGS = 10 V,.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQPF7N65 7A N-Channel MOSFET Oucan Semi
FQPF7N60 7A N-Channel MOSFET OuCan
FQPF7N60C N-Channel MOSFET HAOHAI
FQPF7N70 7A N-Channel MOSFET Oucan Semi
FQPF7N80C N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (onsemi)

Part Number Description
FQPF7N60 600V N-Channel MOSFET
FQPF7N10 100V N-Channel MOSFET
FQPF7N10 100V LOGIC N-Channel MOSFET
FQPF7N10L 100V LOGIC N-Channel MOSFET
FQPF7N20 200V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQPF7N65C — N-Channel QFET® MOSFET FQPF7N65C N-Channel QFET® MOSFET 650 V, 7 A, 1.4 Ω August 2013 Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 7 A, 650 V, RDS(on).= 1.4 Ω (Max.) @ VGS = 10 V, ID = 3.5 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ.