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* 6.3A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro.

FQPF8N50

FQPF8N60

FQPF8N60C

FQPF8N60CF

FQPF8N80

FQPF8N80C

FQPF85N06

FQPF8P10

FQPF10N20

FQPF10N20C

FQPF10N50CF

FQPF10N60

FQPF10N60C