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FQPF9N50CF — N-Channel QFET® FRFET® MOSFET
December 2013
FQPF9N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 9 A, 850 mΩ Description
Features
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
• 9 A, 500 V, RDS(on) = 850 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 24 pF) • 100% Avalanche Tested • Fast Recovery Body Diode (Typ.