FQU4N50TU_WS Datasheet N-Channel QFET MOSFET

Manufacturer: Fairchild (now onsemi)

FQU4N50TU_WS n-channel qfet mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQU4N50TU_WS
Manufacturer	Fairchild (now onsemi)
File Size	908.05 KB
Description	N-Channel QFET MOSFET
Datasheet	FQU4N50TU_WS Datasheet

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Overview

FQU4N50TU_WS — N-Channel QFET® MOSFET FQU4N50TU_WS N-Channel QFET® MOSFET 500 V, 2.6 A, 2.

Key Features

2.6 A, 500 V, RDS(on) = 2.7 Ω (Max. ) @ VGS = 10 V, ID = 1.3 A.
Low Gate Charge (Typ. 10 nC).
Low Crss (Typ. 6.0 pF).
100% Avalanche Tested D GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted. .
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