FQU4N60 Datasheet | Fairchild Semiconductor

FQU4N60 600V N-Channel MOSFET 600V N-Channel MOSFET Features - 2.6A, 600V @TJ = 25°C - Typ. RDS(on) = 1.0Ω - Low gate charge (typical 12.8nC) - Low effective output capacitance (typ ical 32pF) - 100% avalanche tested - Improved dv/dt capability November 2002 QFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to Minimize on-state resistance,provide superior switching Performance, and withstand high energy pulse in the Avalanche and mutation mode. These devices are well Suited for high efficiency switch mode power...