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FQU4N60 - 600V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 2.6A, 600V @TJ = 25°C.
  • Typ. RDS(on) = 1.0Ω.
  • Low gate charge (typical 12.8nC).
  • Low effective output capacitance (typ ical 32pF).
  • 100% avalanche tested.
  • Improved dv/dt capability November 2002 QFET TM.

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FQU4N60 600V N-Channel MOSFET FQU4N60 600V N-Channel MOSFET Features • 2.6A, 600V @TJ = 25°C • Typ. RDS(on) = 1.0Ω • Low gate charge (typical 12.8nC) • Low effective output capacitance (typ ical 32pF) • 100% avalanche tested • Improved dv/dt capability November 2002 QFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to Minimize on-state resistance,provide superior switching Performance, and withstand high energy pulse in the Avalanche and commutation mode. These devices are well Suited for high efficiency switch mode power supply,power Factor correction, electronic lamp ballast on half bridge.
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