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FQU5N60C Datasheet 600V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

FQD5N60C / FQU5N60C

Overview

FQD5N60C / FQU5N60C N-Channel MOSFET March 2013 N-Channel QFET MOSFET 600 V, 2.8 A, 2.

Key Features

  • 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A.
  • Low Gate Charge (Typ. 15 nC).
  • Low Crss (Typ. 6.5 pF).
  • 100% Avalanche Tested.
  • RoHS compliant This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy.

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