FQU5N60C - 600V N-Channel MOSFET
FQU5N60C Features
* 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A
* Low Gate Charge (Typ. 15 nC)
* Low Crss (Typ. 6.5 pF)
* 100% Avalanche Tested
* RoHS compliant This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietar
