FR120N - IRFR120N

Features

8.4A, 100V.
rDS(ON) = 0.270Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the brea.

Fairchild Semiconductor

Datasheet Details

Part number	FR120N
Manufacturer	Fairchild Semiconductor
File Size	148.78 KB
Description	IRFR120N
Datasheet	FR120N Datasheet
Additional preview pages of the FR120N datasheet.

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Full PDF Text Transcription

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IRFR120, IRFU120 Data Sheet January 2002 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs www.datasheet4u.com These are N-Channel enhancement mode silicon gate Features • 8.4A, 100V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Published: May 18, 2009 |