* of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications
G40N60A4 Datasheet (199.24 KB)
G40N60A4
Fairchild Semiconductor
199.24 KB
Hgtg40n60a4.
HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT The HGTG40N60A4 is a MOS gated high voltage switching device combinin.
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