* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high
G5N120BND Datasheet (233.09 KB)
G5N120BND
Fairchild Semiconductor
233.09 KB
Hgtg5n120bnd.
HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N.
📁 Related Datasheet
G5NB PCB Power Relay (OMRON)
G5NB-1A PCB Power Relay (OMRON)
G5NB-1A-E PCB Power Relay (OMRON)
G5NB-1A-E-HA PCB Power Relay (OMRON)
G5NB-1A4 PCB Power Relay (OMRON)
G5NB-1A4-E PCB Power Relay (OMRON)
G5NB-1A4-EL-HA PCB Power Relay (OMRON)
G5-iMac Power Supply / 20-Inch Replacement Instructions (Apple)
G5001 300kHz DC-DC Step-Down PWM Controller (Global Mixed-mode Technology)
G5010 Dual-Low On-Resistance Load Switch (Global Mixed-mode Technology)
