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G5N120BND Datasheet, Fairchild Semiconductor

G5N120BND hgtg5n120bnd equivalent, hgtg5n120bnd.

G5N120BND Avg. rating / M : 1.0 rating-15

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G5N120BND Datasheet

Features and benefits

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is th.

Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

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