Part number:
G5N120BND
Manufacturer:
Fairchild Semiconductor
File Size:
233.09 KB
Description:
Hgtg5n120bnd.
G5N120BND-FairchildSemiconductor.pdf
Datasheet Details
G5N120BND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high
G5N120BND-FairchildSemiconductor.pdf
Datasheet Details
G5N120BND
Fairchild Semiconductor
233.09 KB
Hgtg5n120bnd.
G5N120BND Distributor
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