G7N60A4D Datasheet | Fairchild Semiconductor

features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49333. Ordering Information PART NUMBER PACKAGE BRAND HGTG7N60A4D HGTP7N60A4D TO-247 TO-220AB G7N60A4D G7N60A4D HGT1S7N60A4DS TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., HGT1S7N60A4DS9A. Symbol Features - >100k Hz Operation At 390V, 7A - 200k Hz Operation At 390V, 5A - 600V Switching SOA Capability - Typical Fall Time- - - . . 75ns at TJ = 125o C - Low Conduction Loss - Temperature pensating SABER™ Model .fairchildsemi. Packaging JEDEC STYLE TO-247 COLLECTOR (FLANGE) JEDEC TO-220AB E CG COLLECTOR (FLANGE) JEDEC TO-263AB COLLECTOR G (FLANGE) FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143...