G7N60A4D Datasheet Hgtg7n60a4d

Manufacturer: Fairchild (now onsemi)

Overview: Data Sheet HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS January 2005 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching.

Datasheet Details

Part number	G7N60A4D
Manufacturer	Fairchild (now onsemi)
File Size	152.16 KB
Description	HGTG7N60A4D
Datasheet	G7N60A4D-FairchildSemiconductor.pdf

Key Features

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching.

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