HGTD7N60C3 datasheet, igbts equivalent, Fairchild Semiconductor

datasheet Download (Size : 153.52KB)

HGTD7N60C3 Features and benefits

* 14A, 600V at TC = 25oC
*
*
*
* 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC Short Circuit Rating .

HGTD7N60C3 Application

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

HGTD7N60C3 Description

The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a .

Image gallery