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HUF76419S3S - N-Channel MOSFET

Features

  • Ultra Low On-Resistance - rDS(ON) = 0.035Ω, VGS = 10V - rDS(ON) = 0.040Ω, VGS = 5V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Switching Time vs RGS Curves Ordering Information PART NUMBER.

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Full PDF Text Transcription

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Data Sheet HUF76419P3, HUF76419S3S December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) HUF76419P3 GATE SOURCE HUF76419S3S Symbol D G S Features • Ultra Low On-Resistance - rDS(ON) = 0.035Ω, VGS = 10V - rDS(ON) = 0.040Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE BRAND HUF76419P3 TO-220AB 76419P HUF76419S3S TO-263AB 76419S NOTE: When ordering, use the entire part number.
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