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Fairchild Semiconductor Electronic Components Datasheet

HUFA75631S3ST Datasheet

33A/ 100V/ 0.040 Ohm/ N-Channel/ UltraFET Power MOSFETs

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Data Sheet
HUFA75631P3, HUFA75631S3ST
December 2001
33A, 100V, 0.040 Ohm, N-Channel,
UltraFET® Power MOSFETs
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
DRAIN
(FLANGE)
HUFA75631P3
GATE
SOURCE
HUFA75631S3ST
Symbol
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.040Ω, VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA75631P3
TO-220AB
75631P
HUFA75631S3ST TO-263AB
75631S
NOTE: When ordering, use the entire part number, e.g.,
HUFA75631S3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA75631P3
HUFA75631S3ST
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
(TC
(TC
=
=
21050oCoC, V, VGGSS==101V0V) )(F(Figiugruere2)2)
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ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
100
100
±20
33
23
Figure 4
Figures 6, 14, 15
V
V
V
A
A
Power Dissipation 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120
0.80
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 175
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA75631P3, HUFA75631S3ST Rev. B


Fairchild Semiconductor Electronic Components Datasheet

HUFA75631S3ST Datasheet

33A/ 100V/ 0.040 Ohm/ N-Channel/ UltraFET Power MOSFETs

No Preview Available !

HUFA75631P3, HUFA75631S3ST
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
BVDSS
IDSS
IGSS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 95V, VGS = 0V
VDS = 90V, VGS = 0V, TC = 150oC
VGS = ±20V
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
VGS(TH)
rDS(ON)
VGS = VDS, ID = 250µA (Figure 10)
ID = 33A, VGS = 10V (Figure 9)
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
RθJA
TO-220, TO-263
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
Turn-On Delay Time
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
tf
Turn-Off Time
tOFF
GATE CHARGE SPECIFICATIONS
VDD = 50V, ID = 33A
VGS = 10V,
RGS = 9.1
(Figures 18, 19)
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V,
ID = 33A,
Ig(REF) = 1.0mA
(Figures 13, 16, 17)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
ISD = 33A
ISD = 17A
ISD = 33A, dISD/dt = 100A/µs
ISD = 33A, dISD/dt = 100A/µs
©2001 Fairchild Semiconductor Corporation
MIN TYP MAX UNITS
100 - - V
- - 1 µA
- - 250 µA
- - ±100 nA
2 - 4V
-
0.033 0.040
- - 1.25 oC/W
- - 62 oC/W
- - 100 ns
- 9.5 - ns
- 57 - ns
- 40 - ns
- 55 - ns
- - 145 ns
- 66 79 nC
- 35 42 nC
- 2.4 2.9 nC
- 5.4 - nC
- 13 - nC
- 1220 -
- 295 -
- 100 -
pF
pF
pF
MIN TYP MAX UNITS
-
-
1.25
V
-
-
1.00
V
- - 112 ns
- - 400 nC
HUFA75631P3, HUFA75631S3ST Rev. B


Part Number HUFA75631S3ST
Description 33A/ 100V/ 0.040 Ohm/ N-Channel/ UltraFET Power MOSFETs
Maker Fairchild Semiconductor
Total Page 10 Pages
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