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IRFI610B Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: IRFW610B / IRFI610B November 2001 IRFW610B / IRFI610B 200V N-Channel.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Key Features

  • 3.3A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G S D2-PAK IRFW Series G D S I2-PAK IRFI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Cont.

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IRFI610B Distributor