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IRFI644A Datasheet Power MOSFET

Manufacturer: Fairchild (now onsemi)

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Overview

www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 250V.
  • Lower RDS(ON): 0.214Ω (Typ. ) IRFW/I644A BVDSS = 250 V RDS(on) = 0.28Ω ID = 14 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Conti.

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