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IRFI650B, IRFW650B Datasheet - Fairchild Semiconductor

IRFI650B N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI650B Features

* 28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK IRFW Series G D S I2-PAK IRFI

IRFW650B_FairchildSemiconductor.pdf

This datasheet PDF includes multiple part numbers: IRFI650B, IRFW650B. Please refer to the document for exact specifications by model.
IRFI650B Datasheet Preview Page 2 IRFI650B Datasheet Preview Page 3

Datasheet Details

Part number:

IRFI650B, IRFW650B

Manufacturer:

Fairchild Semiconductor

File Size:

696.03 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRFI650B, IRFW650B.
Please refer to the document for exact specifications by model.

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TAGS

IRFI650B IRFW650B N-Channel MOSFET Fairchild Semiconductor

IRFI650B Distributor