IRFNL210B - 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

• 1.0A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! ! " " " TO-92L IRFNL Series ! GDS S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Curren.