IRFNL210B Key Features
- 1.0A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100%
- Part: IRFNL210B
- Manufacturer: Fairchild (official site)
- Size: 716.09 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| IRFN214B | 250V N-Channel MOSFET |
| IRF101 | N-Channel Power MOSFET |
| IRF120 | N-Channel Power MOSFET |
| IRF121 | N-Channel Power MOSFET |
| IRF122 | N-Channel Power MOSFET |
IRFNL210B Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode...