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Fairchild Semiconductor Electronic Components Datasheet

IRFP140A Datasheet

Advanced Power MOSFET

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Advanced Power MOSFET
IRFP140A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 ΟC Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Lower RDS(ON) : 0.041 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
O2
O1
O1
O3
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
BVDSS = 100 V
RDS(on) = 0.052
ID = 31 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
Value
100
31
21.9
120
+_ 20
513
31
13.1
6.5
131
0.88
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.24
--
Max.
1.14
--
40
Units
ΟC/W
Rev. B
©1999 Fairchild Semiconductor Corporation


Fairchild Semiconductor Electronic Components Datasheet

IRFP140A Datasheet

Advanced Power MOSFET

No Preview Available !

IRFP140A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
Min. Typ. Max. Units
Test Condition
100 -- -- V VGS=0V,ID=250 µA
-- 0.11 -- V/ ΟC ID=250µA See Fig 7
2.0 -- 4.0 V VDS=5V,ID=250 µA
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
-- -- 10
VDS=100V
-- -- 100 µ A VDS=80V,TC=150ΟC
-- -- 0.052 VGS=10V,ID=15.5A O4
-- 23.13 --
-- 1320 1710
-- 325 380 pF
-- 148 170
-- 18 50
-- 18 50
ns
-- 90 180
-- 56 120
-- 60 78
-- 10.8 -- nC
-- 27.9 --
VDS=40V,ID=15.5A
O4
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=50V,ID=28A,
RG=9.1
See Fig 13
O4 O5
VDS=80V,VGS=10V,
ID=28A
See Fig 6 & Fig 12
O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 31
Integral reverse pn-diode
A
-- 120
in the MOSFET
O4 -- -- 1.5 V TJ=25ΟC,IS=31A,VGS=0V
-- 132 --
-- 0.63 --
ns TJ=25ΟC ,IF=28A
µC diF/dt=100A/ µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=0.8mH, IAS=31A, VDD=25V, RG=27, Starting TJ =25ΟC
O3 ISD <_ 28A, di/dt <_ 400A/ µs, VDD<_ BVDSS , Starting TJ =25 ΟC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature


Part Number IRFP140A
Description Advanced Power MOSFET
Maker Fairchild Semiconductor
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IRFP140A Datasheet PDF






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