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IRFP450 - N-Channel Power MOSFET

Features

  • 14A, 500V.
  • rDS(ON) = 0.400Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (TAB) ©2002 Fairchild Semiconductor Corporation IRFP450 Rev. B IRFP450 Abs.

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Full PDF Text Transcription

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Data Sheet January 2002 IRFP450 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435. Ordering Information PART NUMBER PACKAGE BRAND IRFP450 TO-247 IRFP450 NOTE: When ordering, use the entire part number.
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