IRFR014 - Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFR014
Manufacturer	Fairchild Semiconductor
File Size	215.81 KB
Description	Power MOSFET
Datasheet	IRFR014-FairchildSemiconductor.pdf

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
Lower RDS(ON): 0.097Ω (Typ. ) BVDSS = 60 V RDS(on) = 0.14Ω ID = 8.2 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC.

📁 IRFR014 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Aug 4, 2016 |