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IRFR220B - 200V N-Channel MOSFET

This page provides the datasheet information for the IRFR220B, a member of the IRFU220B 200V N-Channel MOSFET family.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuou.

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Datasheet preview – IRFR220B

Datasheet Details

Part number IRFR220B
Manufacturer Fairchild Semiconductor
File Size 665.76 KB
Description 200V N-Channel MOSFET
Datasheet download datasheet IRFR220B Datasheet
Additional preview pages of the IRFR220B datasheet.

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Full PDF Text Transcription

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IRFR220B / IRFU220B November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. Features • • • • • • 4.6A, 200V, RDS(on) = 0.
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