IRFR234 Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 250V
- Lower RDS(ON): 0.327Ω (Typ.)
- Part: IRFR234
- Manufacturer: Fairchild (official site)
- Size: 218.65 KB
Other IRFR234 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
IRFR234A | Power MOSFET |
IRFR234 Description
$GYDQFHG 3RZHU 026)(7 IRFR234.