Datasheet Summary
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Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω (Typ.)
BVDSS = 200 V RDS(on) = 0.18 Ω ID = 12.8 A
TO-3PF
1 2 3
1.Gate 2. Drain 3....
