s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s Lower Leakage Current : 10 μA (Max. ) @ VDS = 250V s Lower RDS(ON) : 0.214 Ω (Typ. )
IRFS644A
BVDSS = 250 V RDS(on) = 0.28 Ω ID = 7.9 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Curre.
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Advanced Power MOSFET
FEATURES
s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s Lower Leakage Current : 10 μA (Max.) @ VDS = 250V s Lower RDS(ON) : 0.214 Ω (Typ.)
IRFS644A
BVDSS = 250 V RDS(on) = 0.28 Ω ID = 7.9 A
TO-220F
1
2
3
1.Gate 2. Drain 3.
IRFS644A Datasheet
