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IRFS730A - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology www. DataSheet4U. com IRFS730A BVDSS = 400 V RDS(on) = 1.0 Ω ID = 3.9 A TO-220F Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 400V Lower RDS(ON) : 0.765 Ω (Typ. ) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Dra.

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Note: The manufacturer provides a single datasheet file (IRFS730A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com IRFS730A BVDSS = 400 V RDS(on) = 1.0 Ω ID = 3.9 A TO-220F Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3.
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