Datasheet Summary
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Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.)
IRFR/U220A
BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.6 A
D-PAK
2 1 3 1
I-PAK
1. Gate 2. Drain 3....
