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IRFU420B - 500V N-Channel MOSFET

Download the IRFU420B datasheet PDF. This datasheet also covers the IRFR420B variant, as both devices belong to the same 500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 2.3A, 500V, RDS(on) = 2.6Ω @VGS = 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • D ◀ ▲.
  • G S D-PAK IRFR Series I-PAK G D S IRFU Series G! DataShee DataSheet4U. com ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR420B_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU420B 500V N-Channel MOSFET Fairchild
IRFU420 N-Channel Power MOSFETs Intersil
IRFU420 Power MOSFET IRF
IRFU420 N-Channel Power MOSFETs Intersil Corporation
IRFU420 Power MOSFET Vishay Siliconix

Other Datasheets by Fairchild (onsemi)

Part Number Description
IRFU420 Power MOSFET
IRFU410B 500V N-Channel MOSFET
IRFU430B 500V N-Channel MOSFET
IRFU014A ADVANCED POWER MOSFET
IRFU110 N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com IRFR420B / IRFU420B November 2001 IRFR420B / IRFU420B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Features • • • • • • 2.3A, 500V, RDS(on) = 2.
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