IRFU430B Datasheet | Fairchild Semiconductor

.. IRFR430B / IRFU430B November 2001 IRFR430B / IRFU430B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Features - - - - - - 3.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 25 nC)...