IRFW614A Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 250V
- Lower RDS(ON): 1.393Ω (Typ.)
IRFW614A is Power MOSFET manufactured by Fairchild.
| Part Number | Description |
|---|---|
| IRFW614B | N-Channel MOSFET |
| IRFW610B | N-Channel MOSFET |
| IRFW620A | Power MOSFET |
| IRFW620B | N-Channel MOSFET |
| IRFW624A | Power MOSFET |
$GYDQFHG 3RZHU 026)(7 IRFW/I614A.