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IRFWZ34A - Power MOSFET

Download the IRFWZ34A datasheet PDF. This datasheet also covers the IRFIZ34A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • 175°C Operating Temperature.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 60V.
  • Lower RDS(ON): 0.030Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Curren.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFIZ34A-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFWZ34 Power MOSFET
IRFWZ14 Power MOSFET
IRFWZ14A Power MOSFET
IRFWZ24 Power MOSFET
IRFWZ44 Power MOSFET
IRFW520A Advanced Power MOSFET
IRFW530A Advanced Power MOSFET
IRFW540A Advanced Power MOSFET
IRFW550A (IRFI550A / IRFW550A) Advanced Power MOSFET
IRFW610B N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
$GYDQFHG 3RZHU 026)(7 IRFW/IZ34A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.030Ω (Typ.