IRL610A Datasheet Advanced Power MOSFET

Manufacturer: Fairchild (now onsemi)

Datasheet Details

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Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 200V.
Lower RDS(ON):1.185Ω (Typ. ) 1 2 3 IRL610A BVDSS = 200 V RDS(on) = 0.046Ω ID = 3.3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous.