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Fairchild Semiconductor Electronic Components Datasheet

IRLI640A Datasheet

Power MOSFET

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$GYDQFHG 3RZHU 026)(7
IRLW/I640A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
150°C Operating Temperature
Lower Leakage Current: 10µA (Max.) @ VDS = 200V
Lower RDS(ON): 0.145(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 200 V
RDS(on) = 0.18
ID = 18 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
200
18
11.4
63
±20
64
18
11
5
3.1
110
0.88
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
1.14
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
1


Fairchild Semiconductor Electronic Components Datasheet

IRLI640A Datasheet

Power MOSFET

No Preview Available !

IRLW/I640A
1&+$11(/
32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( Miller ) Charge
200 -- -- V
-- 0.17 -- V/°C
1.0 -- 2.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µA
-- -- 0.18
-- 13.3 --
-- 1310 1705
-- 200 250 pF
-- 95 120
-- 11 30
-- 8 25
ns
-- 46 100
-- 15 40
-- 40 56
-- 6.8 -- nC
-- 18.6 --
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=20V
VGS=-20V
VDS=200V
VDS=160V,TC=125°C
VGS=5V,ID=9A
(4)
VDS=40V,ID=9A (4)
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=100V,ID=18A,
RG=4.6
See Fig 13
(4) (5)
VDS=160V,VGS=5V,
ID=18A
See Fig 6 & Fig 12
(4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
(1) --
-- 18
-- 63
Integral reverse pn-diode
A
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=18A,VGS=0V
-- 224 -- ns TJ=25°C,IF=18A
-- 1.55 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=0.3mH, IAS=18A, VDD=50V, RG=27, Starting TJ =25°C
(3) ISD 18A, di/dt 260A/µs, VDD BVDSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle 2%
(5) Essentially Independent of Operating Temperature
2


Part Number IRLI640A
Description Power MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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