Datasheet Summary
..
Advanced Power MOSFET
Features
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ! Lower RDS(ON) : 1.185Ω (Typ.)
BVDSS = 200 V RDS(on) = 0.046Ω ID = 2.5 A
TO-220F
1.Gate 2. Drain 3....
