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ISL9N316AD3ST - N-Channel Logic Level PWM Optimized UltraFET

Description

This device employs a new advanced trench MOSFET technology and

Features

  • low gate charge while maintaining low on-resistance. Optimized for switching.

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www.DataSheet4U.com ISL9N316AD3ST February 2002 ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features • Fast switching • rDS(ON) = 0.014Ω (Typ), VGS = 10V • rDS(ON) = 0.020Ω (Typ), VGS = 4.5V • Qg (Typ) = 13nC, VGS = 5V • Qgd (Typ) = 4.
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