KSB1116 Datasheet | Fairchild Semiconductor

KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching - plement to KSD1616/1616A TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) - Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature : KSB1116 : KSB1116A : KSB1116 : KSB1116A Ratings -60 -80 -50 -60 -6 -1 -2 0.75 150 -55 ~ 150 Units V V V V V A A W °C °C - PW≤10ms, Duty Cycle≤50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO h FE1 h FE2 VBE (on) VCE (sat) VBE (sat) Cob f T t ON t STG t F - Base-Emitter On Voltage - Collector-Emitter Saturation Voltage - Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time Parameter Collector Cut-off Current Emitter Cut-off Current - DC Current Gain : KSB1116 : KSB1116A Test Condition VCB= -60V, IE=0 VEB= -6V, IC= 0 VCE= -2V, IC= -100m A VCE= -2V, IC = -1A VCE= -2V, IC= -50m A IC= -1A, IB= -50m A IC= -1A, IB= -50m A VCB= -10V, IE=0, f=1MHz VCE= -2V, IC= -100m A VCC= -10V, IC= -100m A IB1= -IB2= -10m A VBE (off)= 2~3V 70 135 135 81 -600 -650 -0.2 -0.9 25 120 0.07 0.7 0.07 Min. Typ. Max. -100 -100 600 400 -700 -0.3 -1.2 m V V V p F MHz µs µs µs Units n A n A - Pulse Test: PW ≤350µs, Duty Cycle≤2% h FE Classification Classification h FE1 Y 135 ~ 270 G 200 ~ 400 L 300 ~ 600 ©2002 Fairchild Semiconductor Corporation Rev. A2, January 2002 KSB1116/1116A Typical Characteristics -100 IB = -250µ A IB = -200µ A -1.0 IB = -5.0m A IB = -4.5m A IB = -3.5m A IB = -4.0m A IC[m A], COLLECTOR CURRENT -80 IC[A], COLLECTOR CURRENT -0.8 IB = -3.0m A IB = -2.5m A IB = -150µ A -60 -0.6 IB = -2.0m A IB = -1.5m A IB = -100µ...