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Fairchild Semiconductor Electronic Components Datasheet

KSD1221 Datasheet

Low Frequency Power Amplifier

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KSD1221
Low Frequency Power Amplifier
• Low Collector-Emitter Saturation Voltage
• Complement to KSB906
1 I-PACK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
60
60
7
3
0.5
20
1
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(on)
fT
Cob
tON
tSTG
tF
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
IC = 50mA, IB = 0
VCB = 60V, IE = 0
VEB = 7V, IC = 0
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
IC = 5A, IC = 0.5A
VCE = 5V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC = 30V, IC = 1A
IB1 = -IB2 = 0.2A
RL = 30
hFE Classification
Classification
hFE1
O
60 ~ 120
Y
100 ~ 200
Min. Typ. Max. Units
60 V
100 µA
100 µA
60 300
20
0.4 1 V
0.7 1 V
3 MHz
70 pF
0.8 µs
1.5 µs
0.8 µs
G
150 ~ 300
©2000 Fairchild Semiconductor International
Rev. A, February 2000


Fairchild Semiconductor Electronic Components Datasheet

KSD1221 Datasheet

Low Frequency Power Amplifier

No Preview Available !

Typical Characteristics
4
IB =90mA
IB=80mA
3 IB = 70mA
IB = 60mA
IB = 50mA
IB = 40mA
2 IB = 30mA
IB = 20mA
1 IB = 10mA
IB = 0
0
02468
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
IC = 10IB
1
0.1
0.01
0.01
0.1 1
IC[A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
10
IC MAX. (PULSE)
IC MAX. (DC)
1
1ms
10ms
100ms
DC
0.1
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2000 Fairchild Semiconductor International
1000
100
VCE = 5V
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
4
VCE=5V
3
2
1
0
0.0 0.4 0.8 1.2 1.6
VBE[V], BASE EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
32
28
24
20
16
12
8
4
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A, February 2000


Part Number KSD1221
Description Low Frequency Power Amplifier
Maker Fairchild Semiconductor
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KSD1221 Datasheet PDF





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