KSD1222 - Power Amplifier Applications

Fairchild (now onsemi)

Datasheet Details

Part number	KSD1222
Manufacturer	Fairchild (now onsemi)
File Size	39.43 KB
Description	Power Amplifier Applications
Datasheet	KSD1222 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KSD1222 KSD1222 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built in a Damper Diode at E-C Darlington TR Complement to KSB907 1 I-PAK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 60 40 5 3 0.