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Fairchild Semiconductor Electronic Components Datasheet

KSD1222 Datasheet

Power Amplifier Applications

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KSD1222
Power Amplifier Applications
• High DC Current Gain
• Low Collector-Emitter Saturation Voltage
• Built in a Damper Diode at E-C
• Darlington TR
• Complement to KSB907
1 I-PAK
1. Base 2. Collector 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
60
40
5
3
0.3
15
1
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
tON
tSTG
tF
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn On Time
Storage Time
Fall Time
IC = 25mA, IB = 0
VCB = 60V, IE = 0
VEB = 5V, IC = 0
VCE = 2V, IC = 1A
VCE = 2V, IC = 3A
IC = 2A, IB = 4mA
IC = 2A, IB = 4mA
VCC = 30V, IC = 3A
IB1 = -IB2 = 6mA
RL = 10
Min. Typ. Max. Units
40 V
20 µA
2.5 mA
2000
1000
1.5 V
2V
0.1 µs
1 µs
0.2 µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001


Fairchild Semiconductor Electronic Components Datasheet

KSD1222 Datasheet

Power Amplifier Applications

No Preview Available !

Typical Characteristics
5
4
3 IB =300µA
275µA
250µA
2 225µA
200µA
1
IB = 175µA
IB = 0
0
012345
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
IC = 500IB
VBE(sat)
VCE(sat)
1
0.1
0.1
1
IC[A], COLLECTOR CURRENT
10
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
IC MAX. (PULSE)
IC MAX. (DC)
10ms 1ms
DC
1
0.1
0.01
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
100
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
10000
1000
VCE = 2V
100
0.1
1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
4
VCE=2V
3
2
1
0
0.0 0.8 1.6 2.4 3.2
VBE[V], BASE EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
20
15
10
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, January 2001


Part Number KSD1222
Description Power Amplifier Applications
Maker Fairchild Semiconductor
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KSD1222 Datasheet PDF





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